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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/CFkk5
Repositorysid.inpe.br/marciana/2004/07.06.10.48
Last Update2004:07.06.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/07.06.10.48.40
Metadata Last Update2018:06.05.01.28.41 (UTC) administrator
Secondary KeyINPE-10802-PRE/6258
ISBN/ISSN0021-8979
ISSN0021-8979
Citation KeyPauliAbSiZaLi:1993:PTCdEp
TitleP-Type Cdte Epilayers Grown By Hot-Wall-Beam Epitaxy
ProjectTECMAT: Tecnologia de materiais / Crescimento e caracterização de filmes epitaixiais de compostos IV-VI crescidos por MBE
Year1993
MonthApr.
Access Date2024, May 18
Secondary TypePRE PI
Number of Files1
Size346 KiB
2. Context
Author1 Pauli, H.
2 Hingerl K
3 Abramof, Eduardo
4 Sitter, H.
5 Zajicek, H.
6 Lischka, K.
Resume Identifier1
2
3 8JMKD3MGP5W/3C9JGUH
Group1
2
3 LAS-INPE-MCT-BR
Affiliation1 Universität Linz, Institut für Experimentalphysik
2 Universität Linz, Institut für Experimentalphysik
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
4 Universität Linz, Institut für Experimentalphysik
5 Universität Linz, Forschungsinstitut für Optoelektronik
6 Universität Linz, Forschungsinstitut für Optoelektronik
JournalJournal of Applied Physics
Volume73
Number8
Pages4061-4063
History (UTC)2006-09-28 22:36:12 :: administrator -> sergio ::
2008-01-07 12:49:55 :: sergio -> marciana ::
2008-02-20 18:06:41 :: marciana -> administrator ::
2018-06-05 01:28:41 :: administrator -> marciana :: 1993
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMATERIALS PHYSICS
Epitaxy
ZNTE
GAAS
ZNSE
FÍSICA DE MATERIAIS
AbstractHighly conducting p-type CdTe films were grown by photoassisted hot-wall-beam epitaxy using Li3N as a dopant source. Doping levels can be controlled from p = 4 X 10(16) to 2 X 10(18) CM-3 , as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/v s, depending on the hole concentration. Photoassisted growth enhances the incorporation of dopants by one order of magnitude and decreases the growth rate.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > P-Type Cdte Epilayers...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
data URLhttp://urlib.net/ibi/6qtX3pFwXQZsFDuKxG/CFkk5
zipped data URLhttp://urlib.net/zip/6qtX3pFwXQZsFDuKxG/CFkk5
Languageen
Target FileJAP04061.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policyallowpublisher allowfinaldraft
Read Permissionallow from all
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.44.57 2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
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